Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors
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Abstract
In this article, we report the results of our investigation of neutron irradiation effects on the collector-emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6×1014 cm-2. We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base-collector junction due to the neutron-induced displacement damage in the collector. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors</title><author><name sortKey="Shatalov, Alexei" uniqKey="Shatalov A">Alexei Shatalov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Oregon State University, Corvallis</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Subramanian, S" uniqKey="Subramanian S">S. Subramanian</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Oregon State University, Corvallis</wicri:cityArea></affiliation></author><author><name sortKey="Dentai, A" uniqKey="Dentai A">A. Dentai</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Lucent Technologies, Crawford Hill Laboratory, Holmdel, New Jersey 07733</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Lucent Technologies, Crawford Hill Laboratory, Holmdel</wicri:cityArea></affiliation></author><author><name sortKey="Chadrasekhar, S" uniqKey="Chadrasekhar S">S. Chadrasekhar</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Lucent Technologies, Crawford Hill Laboratory, Holmdel, New Jersey 07733</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>Lucent Technologies, Crawford Hill Laboratory, Holmdel</wicri:cityArea></affiliation></author><author><name sortKey="Goodnick, S M" uniqKey="Goodnick S">S. M. Goodnick</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Oregon State University, Corvallis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0376811</idno><date when="2000-09-15">2000-09-15</date><idno type="stanalyst">PASCAL 00-0376811 AIP</idno><idno type="RBID">Pascal:00-0376811</idno><idno type="wicri:Area/Main/Corpus">012904</idno><idno type="wicri:Area/Main/Repository">011C52</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Heterojunction bipolar transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Neutron effects</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530P</term><term>8105E</term><term>6180H</term><term>6182F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Transistor bipolaire hétérojonction</term><term>Effet neutron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this article, we report the results of our investigation of neutron irradiation effects on the collector-emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6×10<sup>14</sup> cm<sup>-2</sup>. We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base-collector junction due to the neutron-induced displacement damage in the collector. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors</s1></fA08><fA11 i1="01" i2="1"><s1>SHATALOV (Alexei)</s1></fA11><fA11 i1="02" i2="1"><s1>SUBRAMANIAN (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>DENTAI (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHADRASEKHAR (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>GOODNICK (S. M.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Lucent Technologies, Crawford Hill Laboratory, Holmdel, New Jersey 07733</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287</s1></fA14><fA20><s1>3765-3767</s1></fA20><fA21><s1>2000-09-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0376811</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this article, we report the results of our investigation of neutron irradiation effects on the collector-emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses ∼6×10<sup>14</sup> cm<sup>-2</sup>. 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